On influence of the charge carrier trapping center impurity concentration in the solid state layered upon their properties

Dependence of the charge process characteristics in a semicondactor lauer (of frequency factor kinetic order) included in the solid state layered structures of «metal - dielectric - semiconductor» type upon the charge trapping center concentration has been shown up at the semiconductor layer monoenergetic level determined by alloying impurity of different concentration availabl in it. Dependence of the charge loss stimulated by its trapping at the monoenergetic level has been ascertained while transfer whithin the near surface semiconductor field from the charge process characteristics indicated.