Getting variable-gap solid solution Si1-xGex from a liquid phase

Using experimental data, as well as using theoretical calculations, the results of studies of the composition of melt solutions ( Sn + Ge + Si , Ga + Ge + Si ) from temperature conditions are presented. Single-crystal films of a graded-gap solid solution Si1-xGex (0 substrates were obtained by liquid-phase epitaxy from a limited tin, gallium solution-melt. Optimal technological growth modes are found for obtaining crystalline perfect epitaxial layers and structures.