RF CMOS Low Noise Amplifier Design-A Case Study
Автор: R.K.Lamba, C.H.Vithalani
Журнал: International Journal of Wireless and Microwave Technologies(IJWMT) @ijwmt
Статья в выпуске: 5 Vol.4, 2014 года.
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A design methodology of Differential Design of CMOS low noise amplifier (LNA) with source degeneration for Bluetooth frequency is presented. The results show that the proposed topology is effective and can be used to achieve the minimum noise figure at all frequencies of interest. This LNA was realized in 0.18μm CMOS technology using Microwave Office Tool from AWR Inc. The measured noise figure is 2.066 dB and the gain is 20.29 dB.
LNA, Bluetooth, Source Degeneration
Короткий адрес: https://sciup.org/15012880
IDR: 15012880
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