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Seregin G.M.,
Grafodatskij O.S.,
Khudykin A.A.,
Afonin A.A.
EQUIPMENT FOR MOCVD EPITAXY OF GALLIUM NITRIDE ON SILICON SUBSTRATES UP TO 200 mm IN DIAMETER FOR THE PRODUCTION OF TRANSISTOR HETEROSTRUCTURES
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S. A. Shchurenkova,
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E. E. Zavarin,
W. V. Lundin,
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Demchuk E.V.,
Soyunov A.S.,
Shimokhin A.V.,
Prokopov S.P.,
Maltseva E.I.,
Kuzmin D.E.
